Keivan Navi

Work place: Department of Electrical and Computer Engineering, Shahid Beheshti University, Tehran, Iran



Research Interests: Network Security, Processor Design, Computer systems and computational processes


Keivan Navi received M.Sc. degree in electronics engineering from Sharif University of Technology, Tehran, Iran in 1990. He also received the Ph.D. degree in computer architecture from Paris XI University, Paris, France, in 1995. He is currently a Professor in Faculty of Electrical and Computer Engineering of Shahid Beheshti University. His research interests include Nanoelectronics with emphasis on CNFET, QCA and SET, Computer Arithmetic, Interconnection Network Design and Quantum Computing and cryptography.

Author Articles
Design of Low Voltage and High-Speed BiCMOS Buffer for Driving Large Load Capacitor

By Maede Kaviani Hojjat Sharifi Mahdi Dolatshahi Keivan Navi

DOI:, Pub. Date: 8 Jan. 2016

BICMOS circuits are interesting for designers when a high speed output driver is required especially in I/O circuits. Buffer is an important block in high speed circuits, so designing a buffer with high drive capability has a great effect on circuits with large load capacitor. This paper presents a new BiCMOS buffer which uses 32nm technology node for CMOS transistors and 0.18um technology node for BJT transistors. The proposed buffer operates properly in voltage ranges from 0.8v to 1.5v. The capacitor range is from 0.5pf to 200pf; the overshoot of the output in this capacitor range is less than 10% of the supply voltage that is negligible. The proposed design has improvements in delay for about %88 respectively compared to similar CMOS buffers with high capacitor values.

[...] Read more.
Design and Implementation of a Three-operand Multiplier through Carbon Nanotube Technology

By Mohammad Reza Reshadinezhad Niloofar Charmchi Keivan Navi

DOI:, Pub. Date: 8 Sep. 2015

Multiplication scheme is one of the most essential factors, which is time consuming. Designers and manufacturers of processors emphasis on methods which would not only perform the multiplication scheme in a rapid manner, but would reduce the physical aspect of the design as well; hence, a reduction in power consumption. Addition is one of the fundamental factors in multiplication. Pre-designing of circuits and transistors’ levels used to be made through Metal Oxide Semiconductor Field Effect Transistor (MOSFET), but now, due to scaling and difficulties thereof, new technologies like Single Electron Transistor (SET), Quantum-dot Cellular Automata (QCA) and Carbon Nanotube Field Effect Transistor (CNFET) are introduced. Among the new technologies, CNFET has become center of attention due to similarities in electronic features in relation to MOSFET. A comparison made between CNFET with MOSFET technologies indicate that, power delay product (PDP) and power leakage can be less in nanotube transistors. Field effect transistor circuit’s simulations are accomplished through HSPICE simulator. The simulation results indicate that this proposed Three-operand Carbon Nanotube Multiplier has a better performance in comparison with the three-operand multiplication done on computers nowadays, which we call it classical multiplier in this article.

[...] Read more.
A Novel Quaternary Full Adder Cell Based on Nanotechnology

By Fazel Sharifi Mohammad Hossein Moaiyeri Keivan Navi

DOI:, Pub. Date: 8 Mar. 2015

Binary logic circuits are limited by the requirement of interconnections. A feasible solution is to transmit more information over a signal line and utilizing multiple-valued logic (MVL). This paper presents a novel high performance quaternary full adder cell based on carbon nanotube field effect transistor (CNTFET). The proposed Quaternary full adder is designed in multiple valued voltage mode. CNTFET is a promising candidate for replacing MOSFET with some useful properties, such as the capability of having the desired threshold voltage by regulating the diameters of the nanotubes, which make them very appropriate for voltage mode multiple threshold circuits design. The proposed circuit is examined, using Synopsys HSPICE with the standard 32 nm CNTFET technology with different temperatures and supply voltages.

[...] Read more.
Other Articles