Mahdi Dolatshahi

Work place: Department of Computer Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Esfahan PO BOX: 8514143131, Iran



Research Interests: Algorithm Design, Processor Design, Interaction Design


Mehdi Dolatshahi was born in Isfahan, Iran in 1980. He received the B.Sc. and M.Sc. degree in Electrical Engineering in 2003, 2006 respectively. He received the Ph.D. degree in Electrical Engineering in 2011 from Science and Research Branch, Islamic Azad University, Tehran, Iran. He has been with the Department of Electrical Engineering of Najafabad Branch, Islamic Azad University, since 2006 where he is currently an assistant professor. His research interests include VLSI and CMOS low-voltage, low power analog and mixed-signal integrated circuit design and optimization as well as CMOS optical communications circuit design.

Author Articles
Design of Low Voltage and High-Speed BiCMOS Buffer for Driving Large Load Capacitor

By Maede Kaviani Hojjat Sharifi Mahdi Dolatshahi Keivan Navi

DOI:, Pub. Date: 8 Jan. 2016

BICMOS circuits are interesting for designers when a high speed output driver is required especially in I/O circuits. Buffer is an important block in high speed circuits, so designing a buffer with high drive capability has a great effect on circuits with large load capacitor. This paper presents a new BiCMOS buffer which uses 32nm technology node for CMOS transistors and 0.18um technology node for BJT transistors. The proposed buffer operates properly in voltage ranges from 0.8v to 1.5v. The capacitor range is from 0.5pf to 200pf; the overshoot of the output in this capacitor range is less than 10% of the supply voltage that is negligible. The proposed design has improvements in delay for about %88 respectively compared to similar CMOS buffers with high capacitor values.

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