Work place: University of Chittagong, Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong 4331, Bangladesh
E-mail: jitumohsin@gmail.com
Website: https://orcid.org/0009-0006-2960-0183
Research Interests:
Biography
Mohammad Mohsin, received B. Sc. in year 2023. He is pursuing M. Sc. in Electrical and Electronic Engineering from University of Chittagong. His interest is in solar cell's space application.
By Maitry Barua Mohammad Mohsin Sadman Al Farabe Md. Mizanul Hoque
DOI: https://doi.org/10.5815/ijwmt.2026.03.20, Pub. Date: 8 Jun. 2026
Tin-based perovskites are among the most promising candidates for high performance light-weight and radiation-tolerant space photovoltaics, but their response to energetic proton fluxes is not adequately determined. In this work, integrated SCAPS–SRIM analysis was applied to lead-free MASnI3 perovskite solar cells for space applications in order to correlate device optimization with proton-radiation response. We established a combined SCAPS–SRIM simulation platform to simulate optoelectronic behaviors and radiation tolerance of an Au/Cu2O/MASnI3/TiO2/FTO solar cell under AM0 illumination. Optimal-device calculations demonstrate that device absorber thickness of 0.20–0.30 µm and a TiO2 ETL of 20–50 nm, Cu2O HTL of 50 nm thicknesses result in good carrier collection and minimized recombination losses. Quantum efficiency and J–V measurement illustrate a stable operation under AM0 light, verifying the no extrinsic spectral incompatibility of MASnI3 for the space energy source application. SRIM proton irradiation simulations (10-250 keV, 0° incidence) highlight the most damaging energy range within 50–150 keV for which masked Bragg peak lies in proximity to the MASnI3 absorber and MASnI3/TiO2 interface accompanied by enhanced vacancy density, recoil energy deposition and phonon generation. High-energy protons (>200 keV) which deposit most of their damage in the rear contact stack, minimizing absorber degradation. The results overall indicate that MASnI3 holds a good optoelectronic performance beyond the predictable radiation-damage behavior and thus can be considered as a promising alternative for space photovoltaic technology
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