Maitry Barua

Work place: University of Chittagong, Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong 4331, Bangladesh

E-mail: maitrybarua47@gmail.com

Website: https://orcid.org/ 0009-0002-9619-6580

Research Interests:

Biography

Maitry Barua, received the B.Sc. degree in Electrical and Electronic Engineering (EEE) in 2024. She is presently pursuing the M.Sc. degree in Electrical and Electronic Engineering in the Department of Electrical and Electronic Engineering, University of Chittagong, Chattogram, Bangladesh. Her research interests include first-principles DFT calculations, electronic structure analysis, and solar and renewable energy related materials.

Author Articles
Radiation-Tolerant MASnIā‚ƒ Perovskite Solar Cells for Space Communication: Sequential SCAPS Optimization and SRIM-Based Proton Damage Analysis

By Maitry Barua Mohammad Mohsin Sadman Al Farabe Md. Mizanul Hoque

DOI: https://doi.org/10.5815/ijwmt.2026.03.20, Pub. Date: 8 Jun. 2026

Tin-based perovskites are among the most promising candidates for high performance light-weight and radiation-tolerant space photovoltaics, but their response to energetic proton fluxes is not adequately determined. In this work, integrated SCAPS–SRIM analysis was applied to lead-free MASnI3 perovskite solar cells for space applications in order to correlate device optimization with proton-radiation response. We established a combined SCAPS–SRIM simulation platform to simulate optoelectronic behaviors and radiation tolerance of an Au/Cu2O/MASnI3/TiO2/FTO solar cell under AM0 illumination. Optimal-device calculations demonstrate that device absorber thickness of 0.20–0.30 µm and a TiO2 ETL of 20–50 nm, Cu2O HTL of 50 nm thicknesses result in good carrier collection and minimized recombination losses. Quantum efficiency and J–V measurement illustrate a stable operation under AM0 light, verifying the no extrinsic spectral incompatibility of MASnI3 for the space energy source application. SRIM proton irradiation simulations (10-250 keV, 0° incidence) highlight the most damaging energy range within 50–150 keV for which masked Bragg peak lies in proximity to the MASnI3 absorber and MASnI3/TiO2 interface accompanied by enhanced vacancy density, recoil energy deposition and phonon generation. High-energy protons (>200 keV) which deposit most of their damage in the rear contact stack, minimizing absorber degradation. The results overall indicate that MASnI3 holds a good optoelectronic performance beyond the predictable radiation-damage behavior and thus can be considered as a promising alternative for space photovoltaic technology

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