Work place: EHF Key Laboratory of Fundamental Science, School of Electronic Science and Engineering, University of Electronic Science and Technology of China
E-mail: 61292523@qq.com
Website: https://orcid.org/0009-0004-8682-4330
Research Interests:
Biography
Rongjun Liu was born in 1981. He is currently pursuing the Ph.D. degree with the School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, China. He is a senior engineer at the Industrial Base Research Institution and a key member of the National Key Laboratory of Science and Technology on Microwave and Millimeter-wave.
He is currently the Product Development Manager at San Microelectronics Technology (Suzhou) Company Limited, where his research focuses on GaN power devices, power modules, and high-power microwave system integration technology.
By Rongjun Liu Kaijun Song Qiang Yang Yihong Wang Yong Fan
DOI: https://doi.org/10.5815/ijwmt.2026.03.07, Pub. Date: 8 Jun. 2026
This paper leverages the advantages of single-mode, high-bandwidth transmission in ridge waveguides to design a QV-band ridge waveguide 1-to-2 power divider and a four-port directional coupler. This addresses the issue of narrow single-mode operating bandwidth in traditional waveguide power divider-combiner structures, which is caused by internal multimode characteristics and electromagnetic discontinuities, thereby establishing an integrated power distribution and combining network; The power divider employs a ridge waveguide H-plane T-shaped structure to optimize impedance discontinuities and field distribution, while the radial combiner achieves efficient conversion from the TM₀₁₀ mode to the coaxial TEM mode through four-path radial ridge waveguide inputs and a central metal disk. Simulation results indicate that the ridge waveguide power divider has a relative bandwidth of 64% (31.1–60.39 GHz), while the radial combiner has a relative bandwidth of 31.4% (39.07–53.57 GHz). Using a back-to-back cascaded test setup, experimental verification was completed via a ridge-to-standard waveguide transition adapter. Within the 40–50 GHz operating band, the network exhibits a return loss greater than 15 dB and an insertion loss less than 1.2 dB, with excellent amplitude-frequency characteristics and phase consistency. This structure offers broadband performance, miniaturization, low loss, ease of fabrication, and potential for multi-channel expansion, providing a novel engineered solution for high-power microwave systems in the QV band.
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