Ravinder Kumar

Work place: Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan - 173234, India



Research Interests: Computer Networks


Ravinder Kumar received the Bachelor degree (2009) in Electronics and Communication Engineering from Kurukshetra University, Kurukshetra, India and Master degree (2012) in Electronics and Communication Engineering from Jaypee University of Information Technology, Solan, India.

His research interest includes RFIC design, VLSI design, Networking and Wireless Communication.

Author Articles
Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 ┬Ám CMOS Technology for IEEE Standard 802.11 b/g WLAN

By Viranjay M. Srivastava Ravinder Kumar

DOI: https://doi.org/10.5815/ijisa.2012.09.09, Pub. Date: 8 Aug. 2012

This paper presents the design of low noise amplifier (LNA) at 2.45 GHz and integrated at 0.18 µm RF CMOS process technology. This type of LNA at 2.45 GHz is use in the Bluetooth receiver. The proposed method is useful to optimize noise performance and power gain while maintaining good input and output matching. The amplifier is designed to be used as first stage of a receiver for wireless communication. The main aim of designer is to achieve low noise figure with improved gain with the help of CMOS technology by using single stage n-MOS amplifier. The simulation results show a forward gain of 14.0 dB, a noise-figure of 0.5 dB and stability factor is approximate unity, in which the circuit operates at 14.2 mA drain current with supply voltage of 3.5 V and biasing voltage of 1.5 V.

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