Mahmoud M. A. Eid

Work place: Electronics and Electrical Communication Engineering Department Faculty of Electronic Engineering, Menouf 32951, Menoufia University, EGYPT



Research Interests:


Author Articles
Recent Advances of Distributed Optical Fiber Raman Amplifiers in Ultra Wide Wavelength Division Multiplexing Telecommunication Networks

By Abd El Naser A. Mohammed Ahmed Nabih Zaki Rashed Mahmoud M. A. Eid

DOI:, Pub. Date: 8 May 2012

Recently, many research works have been focused on the fiber optic devices for optical communication systems. One of the main interests is on the optical amplifiers to boost a weak signal in the communication systems. In order to overcome the limitations imposed by electrical regeneration, a means of optical amplification was sought. The competing technology emerged: the first was Raman amplification. One reason was that the optical pump powers required for Raman amplification were significantly higher than that for Erbium doped fiber amplifier (EDFA), and the pump laser technology could not reliably deliver the required powers. However, with the improvement of pump laser technology Raman amplification is now an important means of expanding span transmission reach and capacity. We have deeply studied an analytical model for optical distributed Raman amplifiers (DRAs) in the transmission signal power and pump power within Raman amplification technique in co-pumped, counter-pumped, and bi-directional pumping direction configurations through different types of fiber cable media. The validity of this model was confirmed by using experimental data and numerical simulations.

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Ultra Wide Wavelength Multiplexing/Demultiplexing Conventional Arrayed Waveguide Grating (AWG) Devices for Multi Band Applications

By Abd El Naser A. Mohammed Ahmed Nabih Zaki Rashed Mahmoud M. A. Eid

DOI:, Pub. Date: 8 Mar. 2012

This paper has proposed new materials based conventional arrayed waveguide grating (AWG) devices such as pure silica glass (SiO2), Lithium niobate (LiNbO3) , and gallium aluminum arsenide (Ga(1-x)Al(x)As) materials for multiplexing and demultiplexing applications in interval of 1.45 μm to 1.65 μm wavelength band, which including the short, conventional, long, and ultra long wavelength band. Moreover we have taken into account a comparison between these new materials within operating design parameters of conventional AWG devices such as diffraction order, length difference of adjacent waveguides, focal path length, free spectral range or region, maximum number of input/output wavelength channels, and maximum number of arrayed waveguides. As well as we have employed these materials based AWG to include Multi band applications under the effect of ambient temperature variations.

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