G. Tulasi Ram Das

Work place: Department of EEE, JNTUK Kakinada, Kakinada, 533003, India

E-mail: das123tulasiram@gmail.com

Website: https://orcid.org/0009-0009-5683-3603

Research Interests:

Biography

G Tulasi Ram Das received B. Tech degree in Electrical & Electronics Engineering from J.N.T.U. College of Engineering, Hyderabad, in 1983. He received an M.E. in Industrial Drives & Control from O.U College of Engineering, Hyderabad, in 1986. He has received PhD degree from the Indian Institute of Technology, Madras, in 1996. He has 35 years of teaching and research experience. His Research interests are Power Electronics, Industrial Drives & FACTS Controllers, PV Technologies. He has supervised 29 Ph.D. theses and published/presented 172 technical research papers in national and international conferences and journals. He is Fellow of Institute of Engineers (India), (FIE), and Fellow of Institute of Electronics and Telecommunication Engineering (FIETE), and Member of IEEE and SESI. He was Vice-Chancellor, Jawaharlal Nehru Technological University Kakinada, Andhra Pradesh (Nov 2011 to Nov 2014). He also held administrative positions in JNTUH, namely, Registrar, Director Academic & Planning, Principal and Vice-Principal, University College of Engineering, Hyderabad, and Head, department of EEE, CoE, Hyderabad.

Author Articles
Field Performance and Degradation Comparison of ESS Multicrystalline and Conventional Polysilicon PV Modules in Hot Indian Climates: A One-Year Rooftop Study

By Ramchander Nirudi G. Tulasi Ram Das T. S. Surendra

DOI: https://doi.org/10.5815/ijem.2026.05.16, Pub. Date: 8 Oct. 2026

Photovoltaic (PV) technology is crucial for sustainable energy generation, but the performance of PV systems in real-life conditions is closely associated with the material quality, degradation and the climatic conditions. While conventional poly-Si modules are already widely installed, Elkem Solar Silicon (ESS®)-based multicrystalline silicon modules are more sustainable owing to energy savings in silicon production. But little field data is available on their behaviour in the hot Indian climate. Thus, the field performance of ESS® multicrystalline silicon and conventional poly-Si modules after one year of installed operation in a rooftop grid-connected 6.71 kWp PV system at BVRIT, Telangana, India is assessed. The demonstration system comprises 28 modules (organized in four rows of seven, with 14 ESS® modules and 14 conventional poly-Si modules). Performance analysis was carried out using field-based energy yield, I–V and P–V characteristics, peak power degradation, electrical mismatch, as well as electroluminescence imaging of the modules. The findings show that both technologies had minimal degradation, with an average annual power loss of 0.3% for ESS® modules and 0.4% for conventional poly-Si modules. ESS® module technology showcased 1-1.5% higher energy yield than conventional poly-Si modules, mainly because of better high-temperature operation. At the module level, it was detected that the majority of the changes in power were due to variations in current (Isc and Imp) rather than in Voc = 37.56 V and Vmpp = 30.23 V. Electroluminescence image analysis showed only minor defects from handling, but no defects caused by material. The results confirm that ESS® modules offer higher energy yield and are more suitable for sustainable grid-connected PV systems.

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