Heterostructure Silicon and Germanium Alloy Based Thin Film Solar Cell Efficiency Analysis

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Ashish Kumar Singh 1,* Manish Kumar 1 Dilip Kumar 1 S N Singh 1

1. Department of Electronics & Communication Engineering National Institute of Technology, Jamshedpur and 831014, India

* Corresponding author.

DOI: https://doi.org/10.5815/ijem.2020.02.03

Received: 1 Dec. 2019 / Revised: 6 Jan. 2020 / Accepted: 27 Jan. 2020 / Published: 8 Apr. 2020

Index Terms

vegard’s law, short-circuit current density, Saturation current (Is), Generation Rate, Absorption Coefficient and open circuit voltage.


Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1−xGex heterojunction solar cell. The addition of Ge content to Si layer will affect the property of material. The research has investigated characteristics such as short circuit current density (Jsc), generation rate G , absorption coefficient (α), and open circuit voltage (Voc), power, fill factor (FF) with optimal Ge concentration. The speculative determination of appropriate germanium mole fraction is done to get the maximized thin-film solar cell efficiency.

Cite This Paper

Ashish Kumar Singh, Manish Kumar, Dilip Kumar, S N Singh. “Heterostructure Silicon and Germanium Alloy Based Thin Film Solar Cell Efficiency Analysis ", International Journal of Engineering and Manufacturing(IJEM), Vol.10, No.2, pp.29-40, 2020. DOI: 10.5815/ijem.2020.02.03


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